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Jan 8, 2025 · Toyoda Gosei paper shows that power devices using its GaN substrate technology show better power regulation capacity and yield ratio Toyoda Gosei has shown how a …

Nov 13, 2024 · At Electronica 2024, Chinese SiC wafer company SICC will exhibit what is thought be the first 300mm N-type SiC substrate. SICC already makes 150mm and 200mm N-type …

Nov 27, 2024 · A research group at Nitride Technology Centre (NTC) at TU Braunschweig in Germany, aims to make future computers more powerful and energy-efficient by using …

Nov 4, 2024 · Infineon has launched a new family of high-voltage discretes, the CoolGaN transistors 650 V G5. Target applications range from consumer and industrial switched-mode …

Oct 31, 2024 · The University of Michigan has won $3M funding to develop CMOS-compatible, defect-free universal growth of III-N and III-V multilayer heterostructures on silicon.

Dec 5, 2024 · In quite a number of applications there is much demand for scalable, low-cost, high-performance sensors. Such sensors are wanted for autonomous systems, robotics, defence …

Nov 26, 2024 · Valeo, an automotive technology company, and Rohm Semiconductor are collaborating to optimise the next generation of power modules for electric motor inverters …

Sep 27, 2024 · The UK Government has acquired Coherent's GaAs fab in Newton Aycliffe, County Durham, as a crucial supply chain to UK defence. The new company will be called …

Oct 7, 2024 · Migrating the manufacture of GaN power devices to 300 mm lines will boost yield, improve metrology and trim costs. BY RICHARD STEVENSON, EDITOR, CS MAGAZINE